首页> 外文期刊>Advanced materials interfaces >Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra-Nanocrystalline Diamond Substrates for High-Performance Photodetector with Excellent UV Light to Dark Current Ratios
【24h】

Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra-Nanocrystalline Diamond Substrates for High-Performance Photodetector with Excellent UV Light to Dark Current Ratios

机译:用于高性能光电探测器的超纳米晶金刚石基板中分散石墨烯薄片的结构工程,高性能光电探测器,具有优异的UV光对暗电流比

获取原文
获取原文并翻译 | 示例
           

摘要

In this work, ultraviolet (UV) photodetectors based on ultra-nanocrystalline diamond (UNCD) and dispersed graphene flakes (GrF) with ZnO nanotubes (ZnTs) heterostructures are investigated. Unique hybrid nanostructure of dispersed GrF into ZnTs on discontinuous UNCD substrates using scalable techniques is presented. It is revealed from microstructural analysis that the addition of GrF into highly uniform ZnTs grown on UNCD substrates results outstanding UV photodetection properties. Thus, the GrF-ZnTs/UNCD nanostructure reveals superior UV diode performance, with an ultrahigh UV switching ratio of 19 708 at 5 V, which is excellently better than those of ZnO nanostructures. It is perceived that the perfect distribution of GrF into ZnTs on UNCD substrates results in ultrafast electron-hole recombination. The distribution of GrF and UNCD interlayer enables the new energy levels on the conduction band, which reduces the barrier height to allow fast charge carrier transportation during the UV illumination. It is believed that the addition of GrFs and UNCD layer increase the UV adsorptivity and sufficient amount of conducting path within ZnTs. Therefore, the present GrF-ZnTs/UNCD photodetector can be used as an efficient UV photodetection device with high performance and opening up new opportunities for future optoelectronic devices.
机译:在该作品中,研究了基于超纳米晶金刚石(UNCL)和分散的石墨烯片(GRF)的紫外(UV)光电探测器,其中具有ZnO纳米管(ZnT)异质结构。呈现了使用可伸缩技术在不连续的UNC分散基板上分散的GRF的独特杂交纳米结构。从微观结构分析中揭示了GRF在UNC基质上生长的高度均匀ZnT中的显微结构分析,从而产生突出的UV光电探测性能。因此,GRF-ZnT / UNCOD纳米结构揭示了优异的UV二极管性能,其在5V的超高UV切换比为1908,其优于ZnO纳米结构的优点。它认为GRF在UNC基底上的ZnT中的完美分布导致超快电子空穴重组。 GRF和UNC的分布层的分布使得传导带上的新能级能够降低阻挡高度,以允许在UV照明期间快速充电载流子运输。据信,GRF和UNC分层的添加增加了ZnT内的UV吸附性和足够的导电路径。因此,本发明的GRF-ZNT / UNCLC光电探测器可用作具有高性能的高效紫外线光电检测装置,并为未来的光电器件开辟新的机会。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号