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Prof. Joung Real Ahn obtained a doctorate (Ph.D.) in Physics from POSTECH, Pohang, Republic of Korea. Prof. Joung Real Ahn is a professor in Sungkyunkwan University, Suwon, Republic of Korea. He has extensive experience in the growth of quantum materials such quantum wires (ID) and layers (2D) and 3D quantum surface architecture and photoemission experiments including angle-resolved photoemission spectroscopy and X-ray photoemission spectroscopy, and in diffraction experiments including X-ray diffraction and low energy electron diffraction. He is well known in this research field, and has published numerous papers in world-leading journals, including Science (2014), Nano Letters (2015), ACS Nano (2014, 2013), Journal of American Chemical society (2006), and Physical Review Letters (2005, 2004, 2003, 2002, 2000). In particular, he recently achieved a break-through in materials science based on spectroscopy and the diffraction experiments: wafer-scale single-crystal growth of graphene (Science (2014)), 3D carbon architecture (ACS Nano (2014)), and direct observation of one-dimensional semiconductor wire with a size below 1 nm (Nano Letters (2015)]. He also has an experience of a home-built STM system, called an inelastic-electron-tunneling-spectroscopy (IETS) STM system operating at 4 K, and fabrications of FET devices.
机译:Joung Real Ahn教授在大韩民国Postech的Postech的物理学中获得了博士学位(博士学位)。 Joung Real Ahn教授是Sugkyunkwan University的教授,朝鲜共和国水文。他在量子材料的增长方面具有丰富的经验,这种量子线(ID)和层(2D)和3D量子表面架构和光曝光实验,包括角度分辨的光曝光光谱和X射线照相光谱,以及包括X射线的衍射实验衍射和低能量电子衍射。他在这项研究领域众所周知,并在世界领先的期刊上发表了许多论文,包括科学(2014年),纳米信(2015年),ACS Nano(2014年,2013),美国化学学会(2006),和物理评论信(2005,2004,2003,2002,2000)。特别是,他最近在基于光谱学和衍射实验的基础上实现了材料科学中的突破性:石墨烯的晶片级单晶生长(科学(2014)),3D碳架构(ACS Nano(2014))和直接观察尺寸低于1nm的一维半导体线(纳米字母(2015)]。他还具有自制STM系统的经验,称为无弹性 - 电子隧道光谱(IET)STM系统运行4 k,以及FET器件的制造。

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