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Effect of substrate temperatures on the electrical resistivity of thermally evaporated Mn thin films

机译:衬底温度对热蒸发锰薄膜电阻率的影响

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Resistivity measurements have been performed on three samples of Mn thin films from 300 to 1.4 K using the van der Pauw four probe technique. The films were grown by thermal evaporation onto glass substrates held at 523, 323 and 77 K, respectively in a bell jar held at 6 x 10~(-6) Torr. The resistivity-temperature results of the three specimens reveal a variety of low temperature behaviours. A behaviour typical of the bulk alpha-Mn is obtained with the film grown at a substrate temperature of 523 K whilst with the film grown at a substrate temperature of 323 K, the resistivity tends to a saturation at low temperatures exhibiting a behaviour reminiscent of Kondo scattering. The resistivity-temperature behaviour of the sample held at a substrate temperature of 77 K may be regarded as typical of a metallic alloy glass with a negative temperature coefficient of resistivity at high temperatures and this turns to a T~2 dependence of resistivity at very low temperatures.
机译:使用范德堡四探针技术对300到1.4 K的三个Mn薄膜样品进行了电阻率测量。通过热蒸发将膜生长在分别保持在6 x 10〜(-6)托的钟形罩中的分别保持在523、323和77 K的玻璃基板上。这三个样品的电阻率-温度结果显示了各种低温行为。用在523 K的衬底温度下生长的薄膜获得典型的体相Al-Mn的行为,而在323 K的衬底温度下生长的薄膜,在低温下电阻率趋于饱和,表现出让人想起Kondo的行为。散射。保持在77 K的基板温度下的样品的电阻率-温度行为可以被认为是金属合金玻璃的典型特征,该金属合金玻璃在高温下具有负电阻率温度系数,这在非常低的温度下变成电阻率的T〜2依赖性温度。

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