首页> 外文期刊>Chemphyschem: A European journal of chemical physics and physical chemistry >Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity
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Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity

机译:基于低维GESE微晶的可见尼拉光电探测器:设计形态和改进的光反对子

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GeSe micro-sheets and micro-belts have been synthesized by a facile one-pot wet chemical method in 1-octadecene solvent and oleic acid solvent, respectively. The adsorption of more oleic acid molecules on the (002) plane promoted growth along [010] direction of the GeSe micro-belts and limited carrier transport in this direction, resulting in higher carrier concentration and mobility of the GeSe micro-belts. The performance of the photodetectors based on the single GeSe micro-sheet and the single GeSe micro-belt was investigated under illumination at 532 nm, 980 nm and 1319 nm. Both, photodetectors based on a single GeSe micro-sheet and a single GeSe micro-belt, exhibit a high photoresponse, short response/recovery times, and long-term durability. Moreover, the photodetector based on a single GeSe micro-belt displays a broadband response with a high responsivity (5562 A/W at 532 nm, 1546 A/W at 980 nm) and detectivity (3.01x10(12) Jones at 532 nm, 8.38x10(11) Jones at 980 nm). These excellent characteristics render single GeSe micro-belts very interesting for use as highly efficient photodetectors, especially in the NIR region.
机译:GEES微片和微腰带分别通过1-十八烯烯溶剂和油酸溶剂中的容易的单壶湿化学方法合成。在这种方向上促进了(002)平面上的更多油酸分子促进了GESE微带的方向和有限载流子传输的生长,导致GESE微带的载流子浓度和迁移率更高。在532nm,980nm和1319nm的照明下研究了基于单个gese微片和单个gese微带的光电探测器的性能。两者都是基于单个GEES微片和单个GEES微带的光电探测器,具有高光响应,短响应/恢复时间和长期耐久性。此外,基于单个GEES微带的光电探测器显示高响应度的宽带响应(5562A / W,在532nm,980nm,1546A / w处)和探测(3.01x10(12)琼斯,532 nm, 8.38x10(11)琼斯在980 nm处)。这些优异的特点使单个GESE微型带非常有趣,用作高效的光电探测器,尤其是在NIR区域。

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