Synthesis, characterization, thermal properties of silicon(IV) compounds containing guanidinato ligands and their potential as CVD precursors

摘要

The title compounds of the type (Me3Si)(2)N-C(=N'R)(-N '' RSiMe3) (with R - iPr or Cy) as potential CVD precursors have been synthesized and characterized by X-ray diffraction, H-1 NMR, C-13 NMR, Si-29 NMR and elemental analysis where necessary. Among these characterizations, solid-/ liquid-state Si-29 NMR were accomplished to study their behavior in the solid and solution. Thermal properties including stability, volatility, transport behavior and vapour pressure were evaluated by thermogravimetric analysis (TGA) to confirm that they are suitable for the CVD procedure. Deposition was accomplished in a hot wall CVD reactor system, which preliminarily verified the ability of these compounds as CVD precursors.