Carrier-tunable magnetism in two dimensional graphene-like C2N

摘要

We explore the carrier doping effect on magnetic properties in two dimensional (2D) graphene-like C2N (g-C2N) by performing spin-polarized density functional theory calculations. 2D g-C2N can be induced to ferromagnetism by hole doping with a quite low critical concentration of 5 x 10(13) cm(-2). Upon increasing the hole density, both the magnetic moment and the magnetic coupling can be enhanced. The predicted magnetism originates from the flat bands from the non-bonding sigma-states localized at the nitrogen atoms. Our findings open an opportunity to explore magnetic phenomena in 2D, and to control spin transport in 2D semiconductors by electrostatic gating.