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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range
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Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range

机译:在宽温度范围内的铜氧化物单晶薄膜中的热刺激电流响应

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Cupric oxide single crystal thin films (similar to 26 nm) were grown by plasma-assisted molecular beam epitaxy. X-ray diffraction, Raman spectra and in situ reflection high-energy electron diffraction show that the thin films are 2 x 2 reconstructed with an in-plane compression and out-of-plane stretching. A thermal stimulated current measurement indicates that the electric polarization response is shown in the special 2D cupric oxide single crystal thin film over a wide temperature range from 130K to near-room temperature. We infer that the abnormal electric response involves the changing of phase transition temperature induced by structure distortion, the spin frustration and the magnetic fluctuation effect of a short-range magnetic order, or the combined action of both of the two factors mentioned above. This work suggests a promising clue for finding new room temperature single phase multiferroics or tuning phase transition temperatures.
机译:通过等离子体辅助分子束外延生长氧化铜单晶薄膜(类似于26nm)。 X射线衍射,拉曼光谱和原位反射高能电子衍射表明,薄膜是2×2,其与面内压缩和外平面的拉伸重建。 热刺激的电流测量表明,电极化响应在特殊的2D铜氧化物单晶薄膜中显示在宽温度范围内,从130K到接近室温。 我们推出异常电响应涉及通过结构变形,旋转挫折和短距离磁场的磁性波动效应来改变相变温度,或者上述两个因素的组合作用。 这项工作表明,用于查找新的室温单相多数或调谐相变温度的有希望的线索。

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