Sol-Gel Deposited Double Layer TiO2 and Al2O3 Anti-Reflection Coating for Silicon Solar Cell

摘要

In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol gel derived A1203 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol gel derived TiO2 precursor, which was finally annealed at 400 degrees C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of similar to 13.95% with short circuit current (J(sc)) of 35.27 mA/cm(2), open circuit voltage (V00) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (R-s) as compared to single layer ARCs, resulting in the high V-oc and FF.