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Ordered high aspect ratio nanopillar formation based on electrical and thermal reflowing of prepatterned thin films

机译:基于电气和热回流的预先质地薄膜的有序高纵横比纳米池形成

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Creating well-ordered, submicron-sized pillars have been stated as main limitation for electrically induced patterning of nanofilms (thickness 100 nm) [1]. In our previous works, it was shown that the aspect ratio of formed nanopillars was increased to about 0.35 when thermocapillary induced instabilities (Thermally Induced Patterning, TIP) is combined with electrodynamics instabilities (Electrically Induced Patterning, EIP). However, further reduction of pillar size resulted in a coarse and randomly distributed pillars [2,3]. Here, the reflowing of initially prepatterned nanofilms are examined in the EIP and combined EIP-TIP process to create a well-ordered and high aspect ratio nanopillar arrays without sacrificing the fidelity of the final structure. The long-wave approximation is used to simplify the governing equations and boundary conditions leading to a fourth order nonlinear partial differential equation called thin film equation that describes the spatio-temporal evolution of the interface. The mechanism of pattern reflowing is discussed for both linear (initial) and nonlinear (long-term) deformations in EIP and EIP-TIP process. The optimum initial pattern width, height and the center-to-center distance is found based on the characteristic wavelength for growth of instabilities predicted by linear stability analysis and nonlinear simulation results. (C) 2018 Elsevier Inc. All rights reserved.
机译:创建良好的亚微米大小的柱子已被说明为纳米丝的电诱导图案化的主要限制(厚度<100nm)[1]。在我们之前的作用中,当热量诱导的不稳定性(热诱导的图案化,尖端)与电动稳定性(电诱导图案化,EIP)组合时,形成纳米粒子的纵横比增加到约0.35。然而,进一步减少柱尺寸导致粗糙和随机分布的柱[2,3]。这里,在EIP和组合的EIP尖端工艺中检查最初预先用药的纳米丝肌的回流,以产生良好有序和高纵横比纳米玻璃阵列,而不会牺牲最终结构的保真度。长波近似用于简化控制方程和边界条件,导致称为薄膜方程的四阶非线性偏微分方程,所述薄膜方程描述了界面的时空演化。 EIP和EIP尖端工艺中的线性(初始)和非线性(长期)变形讨论了图案的机制。基于线性稳定性分析和非线性模拟结果预测的不稳定性的增长,找到最佳初始图案宽度,高度和中心到中心距离。 (c)2018 Elsevier Inc.保留所有权利。

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