首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides
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Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides

机译:发光ND2S3薄膜:一种新的化学气相沉积途径向稀土硫化物

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摘要

Neodymium sulphide (Nd2S3) belongs to the exciting class of rare earth sulphides (RES) and is projected to have a serious potential in a wide spectrum of application either in pure form or as dopant. We demonstrate a facile and first growth of Nd2S3 thin films via metal-organic chemical vapour deposition (MOCVD) at moderate process conditions using two new Nd precursors, namely tris(N,N-diisopropyl-2-dimethylamido-guanidinato)Nd(iii) and tris(N,N-diisopropyl-acetamidinato)Nd(iii). The promising thermal properties and suitable reactivity of both Nd precursors towards elemental sulphur enabled the formation of high purity -Nd2S3. While the process temperature for film growth ranged from 400 degrees C to 600 degrees C, the films were crystalline above 500 degrees C. We also demonstrate that the as-deposited -Nd2S3 are luminescent, with the optical bandgap ranging from 2.3 eV to 2.5 eV. The process circumvents post-deposition treatments such as sulfurisation to fabricate the desired Nd2S3, which paves the way for large scale synthesis and also opens up new avenues for exploring the potential of this class of materials with properties for functional applications.
机译:硫化钕(ND2S3)属于稀释类的稀土硫化物(RES),并且预计以纯的形式或掺杂剂在宽的应用中具有严重潜力。我们在使用两个新的Nd前体的中等过程条件下,通过金属 - 有机化学气相沉积(MOCVD)来证明ND2S3薄膜的容易和第一生长,即使用两个新的Nd前体,即Tris(N,N-二异丙基-2-二甲基脒基胺)Nd(III)和三(N,N-二异丙基 - 乙酰氨基甲基氨基甲基)Nd(III)。 ND前体对元素硫的有前途的热性能和合适的反应性使得形成高纯度-ND2S3。虽然薄膜生长的过程温度范围为400℃至600℃,但薄膜是高于500℃的结晶。我们还证明了沉积的-ND2S3是发光的,光学带隙从2.3eV到2.5eV 。该过程避免沉积后处理,例如硫化,以制造所需的ND2S3,为大规模合成铺平道路,并且还开辟了新的途径,用于探索这类材料的潜力,具有功能应用的性能。

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