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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Plasmon-Induced Quantum Interference near Carbon Nanostructures
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Plasmon-Induced Quantum Interference near Carbon Nanostructures

机译:碳纳米结构附近的等离子体诱导量子干扰

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摘要

We investigate the spontaneous emission properties of a V-type quantum emitter when interacting with either a graphene monolayer or a single-wall carbon nanotube. Quantum interference (QI) effects in spontaneous emission arise due to the anisotropic Purcell effect in both cases. For a graphene monolayer the degree of QI takes values close to 0.333. For the carbon nanotube the confinement of light in one dimension enhances significantly the degree of QI. The high degree of QI is obtained for different orientations of the respective transition dipoles and for a wide range of the emission energy of the quantum emitter, the chemical potential, and the nanotube radius.
机译:当用石墨烯单层或单壁碳纳米管相互作用时,我们研究了V型量子发射器的自发排放性能。 由于两种情况下的各向异性嘌呤效应,量子干扰(QI)效应出现自发发射。 对于石墨烯单层,QI的程度可容纳0.333。 对于碳纳米管,一个尺寸中的光的限制会显着提高QI的程度。 为各个过渡偶极子的不同取向获得高度的Qi,并且用于量子发射器的宽范围的发射能量,化学电位和纳米管半径。

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