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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Formation of Tungsten Oxide Nanowires by Electron-Beam-Enhanced Oxidation of WS2 Nanotubes and Platelets
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Formation of Tungsten Oxide Nanowires by Electron-Beam-Enhanced Oxidation of WS2 Nanotubes and Platelets

机译:通过电子束型氧化物氧化物纳米线形成WS2纳米管和血小板的氧化氧化

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摘要

Oxidation of van der Waals-bonded layered semiconductors plays a key role in deterioration of their superior optical and electronic properties. The oxidation mechanism of these materials is, however, different from nonlayered semiconductors in many aspects. Here, we show a rather unusual oxidation of tungsten disulfide (WS2) nanotubes and platelets in a high vacuum chamber at a presence of water vapor and at elevated temperatures. The process results in the formation of small tungsten oxide nanowires on the surface of WS2. Utilizing real-time scanning electron microscopy, we are able to unravel the oxidation mechanism, which proceeds via reduction of initially formed WO3 phase into W18O49 nanowires. Moreover, we show that the oxidation reaction can be localized and enhanced by an electron-beam irradiation, which allows for on-demand growth of tungsten oxide nanowires.
机译:van der WALS键合层状半导体的氧化在其优越的光学和电子性质的恶化中起着关键作用。 然而,这些材料的氧化机理与许多方面中的非层形半导体不同。 在这里,我们在水蒸气和升高的温度下,在高真空室中显示钨二硫化物(WS2)纳米管和血小板的相当不寻常的氧化。 该方法导致在WS2的表面上形成小钨纳米线。 利用实时扫描电子显微镜,我们能够解开氧化机制,其通过将最初形成的WO3相进入W18O49纳米线而进行。 此外,我们表明氧化反应可以通过电子束辐射局部化和增强,这允许氧化钨纳米线的按需生长。

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