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Direct Visualization of Near-Field Distributions on a Two-Dimensional Plasmonic Chip by Scanning Near-Field Optical Microscopy

机译:通过扫描近场光学显微镜通过扫描二维等离子体芯片上的近场分布的直接可视化

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A precise understanding of the near-field distributions of plasmonic nanostructures is indispensable for their practical applications. In this study, we directly visualized near-field distributions on two-dimensional nanohole arrays covered with a gold film (plasmonic chip) by scanning near-field optical microscopy. In the near-field images, strong extinction spots were observed not only inside the nanoholes but also on the outside. We also found that the spatial characteristics outside the nanoholes are strongly dependent on the excitation wavelength. From the electromagnetic simulations, we revealed that the positions of the extinction spots in the near-field images are well correlated with the locations for the enhanced electric fields. We also found that the excitation wavelength dependency on the near-field distributions are rationalized with the classical grating coupling conditions for the plasmonic chip. These findings provide new physical insights into the near-field characteristics of the metallic nanohole arrays and are essential not only for optimizing the performances in the plasmonic nanohole arrays but also for boosting their practical applications.
机译:对近场纳米结构的近场分布的精确理解对于它们的实际应用是必不可少的。在这项研究中,我们通过扫描近场光学显微镜直接在用金膜(等离子体芯片)覆盖的二维纳米孔阵列上可视化近场分布。在近场图像中,不仅在纳米孔内而且在外面观察到强烈的消光斑点。我们还发现,纳米孔外的空间特性强烈地取决于激发波长。从电磁模拟中,我们透露,近场图像中的消光点的位置与增强电场的位置良好相关。我们还发现,对近场分布的激发波长依赖性利用代言芯片的经典光栅耦合条件合理化。这些发现提供了新的物理见解,进入金属纳米孔阵列的近场特性,并且不仅是为了优化等离子体纳米阵列中的性能,而且必须用于提高其实际应用。

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