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Electrochemistry of the Basal Plane versus Edge Plane of Graphite Revisited

机译:重新求解石墨平面与边缘平面的电化学

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摘要

The electrochemical activity of the basal plane and edge plane of graphite has long been a subject of an extensive debate. While significant advances have been made, several gaps still exist in our understanding of this issue, namely, the relative differences in the electrochemical activity of the perfect basal plane and perfect edge plane and the dependence of measurable electrochemical quantities on the edge/defect density of the basal plane. In this work, we employ a microdroplet electrochemical cell technique and atomic force microscopy to measure localized electrochemical properties of the graphitic surface with known edge coverage. The electron transfer rate, capacitance, and density of electronic states of the perfect basal plane and perfect edge plane are estimated, and a qualitative model is proposed for the dependence of the electrochemical quantities on the defect density of the basal plane.
机译:石墨的基底平面和边缘平面的电化学活性长期以来一直是广泛争论的主题。 虽然已经取得了重大进步,但我们对这一问题的理解仍然存在几个差距,即完美的基础平面和完美的边缘平面的电化学活动的相对差异以及可测量的电化学数量对边缘/缺陷密度的依赖性 基础平面。 在这项工作中,我们采用Microdroplet电化学电池技术和原子力显微镜,以测量具有已知边缘覆盖的石墨表面的局部电化学性质。 估计完美基平面和完美边缘平面的电子状态的电子传输速率,电容和密度,并且提出了一种定性模型,用于电化学数量对基面缺陷密度的依赖性。

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