机译:电场修改Arhenius在非晶氧化物半导体薄膜晶体管中的电荷输送描述
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Department of Information Display Advanced Display Research Center Kyung Hee University Korea;
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xidian University China;
Department of Information Display Advanced Display Research Center Kyung Hee University Korea;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
State Key Laboratory of Magnetism Institute of Physics of Chinese Academy of Sciences Beijing 100029 China;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
Institute of Physics National Academy of Sciences of Ukraine Prospect Nauky 46 03028 Kyiv Ukraine;
Department of Information Display Advanced Display Research Center Kyung Hee University Korea;
Key Laboratory of Microelectronic Devices &
Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China;
机译:电场修饰的Arrhenius对非晶氧化物半导体薄膜晶体管中电荷传输的描述
机译:界面介电层对基于溶胶 - 凝胶非晶金属氧化物薄膜晶体管的电荷传输特性的影响
机译:具有非晶氧化物半导体,非晶In-Ga-Zn-O的铁电栅薄膜晶体管的制造与表征
机译:非晶氧化物半导体薄膜晶体管中依赖温度的电子传输
机译:用于高性能薄膜晶体管的非晶态金属氧化物半导体的低温溶液处理。
机译:具有固溶处理的金属氧化物半导体和介电膜的可穿戴式1 V工作薄膜晶体管通过低温深紫外光退火在低温下制成
机译:支持和解释mOsavanvés:dispositif FD-sOI,transistor sans jonctions(JLT)ettransistoràcoucheminceàlele-conducteur d'oxyde amorphe。高级mOs器件的电气特性和建模:FD-sOI器件,无结晶体管和非晶氧化物半导体薄膜晶体管