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Annealing of defects after irradiation of YBCO single crystals with fast electrons

机译:用快速电子照射YBCO单晶辐射后的缺陷

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摘要

The effect of annealing on the conductivity of optimally doped YBa(2)Cu(3)O(7-delta )single crystals irradiated with fast electrons is investigated. The variation of width of the superconducting transition with increase of the irradiation dose and in the course of annealing is associated with the evolution of the sample inhomogeneity. A recovery of the critical temperature T-c after annealing to some intermediate value between those in the initial and irradiated states is observed. This recovery of T-c is accompanied by a substantial narrowing of the superconducting transition whose width nicely matches that in the non-irradiated state. The observed transition narrowing is attributed to an improvement of the sample homogeneity in consequence of the diffusion-induced growth and eventual coalescence of superconducting domains. In addition, the complete recovery of the normal conductivity after annealing points to a reversible change of parameters of the charge carriers scattering on phonons and defects.
机译:研究了退火对用快速电子照射的最佳掺杂YBA(2)Cu(3)o(7-Δ)单晶的电导率的影响。超导转变宽度随着辐射剂量的增加和退火过程中的宽度与样品不均匀性的演变相关。观察到临界温度T-C在退火到初始和辐照状态之间的中间值之后的恢复。 T-C的恢复伴随着超导转变的大幅度缩小,其宽度与非照射状态的宽度匹配。所观察到的过渡变窄归因于随着扩散诱导的生长和超导结构域的最终聚结而改善样品均匀性。另外,退火后的正常电导率的完全恢复指向电源载流子的参数的可逆变化,散射在声子和缺陷上。

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