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n-GaAs based extrinsic Dodecanacci photonic quasicrystal

机译:基于N-GAAS的外在十二烷基anci光子拟矩阵

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摘要

The transmittance spectrum of n-GaAs based one dimensional extrinsic magnetized Dodecanacci multilayered photonic structure is investigated. The two-layered system as the magnetic and non-magnetic field is applied spatially to a bulk semiconductor material of the quasiperiodic structure. The dielectric function is based on the Drude model, and the transmission coefficients are calculated using the transfer matrix method. The results reveal the right shifting of forbidden gaps towards the higher frequency region for the proposed Dodecanacci sequence. Besides, by applying an external magnetic field the broader bandgaps appear above the plasma frequency for different generation numbers of the Dodecanacci sequence. The robustness in the bandgaps with a change in the layer thickness and width of the photonic bandgap increases monotonically. Also, the electron density results convey the control of the width and the maximum transmission of electromagnetic waves for all types of Dodecanacci structures. The features mentioned above are useful for future optoelectronic applications like the designing of tunable optical filters.
机译:研究了基于N-GaAs的一维外部磁化十二烷饼的透射谱。作为磁性和非磁场的两层系统在空间上施加到QuaSiodic结构的块状半导体材料。介电函数基于博鲁德模型,并且使用传输矩阵方法计算透射系数。结果揭示了禁止禁区朝向较高频率区域的正确转化为提出的十二烷曲奇序列。此外,通过施加外部磁场,更宽的带隙出现在等离子体频率上方,用于多道教序列的不同一代数。带隙中的鲁棒性与光子带隙的层厚度和宽度的变化单调增加。而且,电子密度结果传达了所有类型的十二烷载体结构的宽度控制和最大传输电磁波。上述特征对于未来的光电应用,如可调谐光学滤波器的设计。

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