Extending charge separation lifetime and distance in patterned dye-sensitized SnO2-TiO2 mu m-thin films

摘要

A simple method for the preparation of patterned dye-sensitized SnO2-TiO2 thin films, designed to prolong the lifetime of the interfacial charge separated state is presented. Using microfluidic technology, the thin films were sensitized with the organic sensitizer D35 such that they contain SnO2-TiO2 areas with dye and SnO2 dye-free areas at which injected electrons can be accumulated. Single wavelength transient absorption spectroscopy confirmed significantly extended charge separation lifetime at the dye-semiconductor interface. Sufficiently high density of injected electrons results in substantial decrease of charge recombination rate constants (k(cr)); a factor of similar to 50 compared to dye-sensitized TiO2 thin films and a factor of similar to 2000 compared to dye-sensitized SnO2 thin films. Furthermore, the potential of this approach was confirmed by photoinduced conduction band mediated electron transfer from the dye to a model electron acceptor, Co protoporphyrin IX, which was adsorbed to the SnO2-only regions.