Two-stage production and characterization of Cu-poor kesterite CZTS absorber layers

摘要

The two-stage production and characterization of single phase CZTS films with controlled band gap and good crystallinity have been reported. Obtaining Cu poor stoichiometry and preventing Sn loss have been aimed in this study. Cu poor structures have been formed and pure kesterite CZTS samples have been obtained by sulfurizing the precursor layers above 500 °C. Optical band gap value of the sample obtained at 550 °C has been found as 1.48 eV which is suitable for solar cell applications. Despite the improvement of film surfaces with increased sulfurization temperature, further efforts are required to enhance the surface morphology of the films to use them with a heterojunction partner in solar cell applications.