InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio

摘要

We report a spatial light modulator (SLM) which consisted of 40 pairs of InGaAs/GaAs/GaAsP multiple-quantum wells (MQWs) that embedded in an asymmetric Fabry-Perot (FP) cavity formed by highly reflective back distributed Bragg reflectors (DBRs) and moderate reflective top DBRs. The center wavelength of FP cavity was designed to have a 20 nm redshift in comparison to the luminescence peaks of MQWs. The relationship between optical absorption spectrum of MQWs and the applied negative voltages was modeled based on the quantum-confined stark effect (QCSE). Large area SLMs with 3 mm diameter were fabricated, which exhibited a high contrast ratio of 12:1 at similar or equal to 940 nm with only 2 V bias. The QCSE effect varying with the applied voltage and the cavity resonant wavelength shifting with the incident angle were also analyzed theoretically and experimentally. The device is promising to improve system performance and reduce power consumption of fast emerging high-speed data transmission within data centers and short board to board interconnects.