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首页> 外文期刊>Optics Letters >High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom
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High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

机译:SIN-SOI平台上的高速波导集成硅光电探测器,用于短路范围DATACOM

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摘要

We present a waveguide integrated high-speed Si photodetector integrated with a silicon nitride (SiN) waveguide on an silicon-on-insulator (SOI) platform for short reach data communication in a 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by the coupling of a femtosecond laser source through an SiN grating coupler of the integrated photodetector. We estimate a 3 dB bandwidth of 14 GHz at 20 V bias which, to the best of our knowledge, is the highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterization of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity. (C) 2019 Optical Society of America
机译:我们介绍了一种与硅氮化硅(SIN)波导集成的波导集成高速Si光电探测器,用于在850nm波长带中短程到达数据通信。 我们展示了在25V偏压下0.44A / W的波导耦合Si PIN光电探测器响应度。 通过通过集成光电探测器的SIN光栅耦合器耦合飞秒激光源的耦合来评估光电探测器的频率响应。 我们估计了20 v偏见的3 dB带宽,这是我们的知识,是波导集成Si光电探测器的最高报告带宽。 我们还提供了制造装置的详细光电DC和AC表征。 演示的集成光电检测器可以实现集成解决方案,以便进行简短达到数据通信和连接。 (c)2019年光学学会

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