Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory

摘要

A detailed understanding of quantization conductance (QC), the correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC state to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well-defined multiple QC states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.