An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

摘要

An inverted bulk-heterojunction (BHJ) hybrid solar cell having the structure ITO/ZnO/P3HT:PbS/Au was prepared under ambient conditions and the device performance was further enhanced by inserting an interface buffer layer of CdSe quantum dots (QDs) between the ZnO and the P3HT:PbS BHJ active layer. The device performance was optimized by controlling the size of the CdSe QDs and the buffer layer thickness. The buffer layer, with an optimum thickness and QD size, has been found to promote charge extraction and reduces interface recombinations, leading to an increased open-circuit voltage (V-OC), short circuit current density (J(SC)), fill factor (FF) and power conversion efficiency (PCE). About 40% increase in PCE from 1.7% to 2.4% was achieved by the introduction of the CdSe QD buffer layer, whose major contribution comes from a 20% increase ofV(OC).