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Large positive magnetoresistance in semiconducting single-walled carbon nanotubes at room temperature

机译:在室温下半导体单壁碳纳米管的大正磁阻

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摘要

We have investigated the effect of a magnetic field on the resistance (magnetoresistance, MR) of single-walled carbon nanotube (SWNT) arrays. The SWNT devices consist of a mixture of metallic and semiconducting SWNTs between palladium electrodes. The MR of the devices is studied at room temperature and in the presence of perpendicular magnetic fields up to 0.24 tesla. The resistance increases as the external magnetic field becomes higher, suggesting a positive MR of SWNTs. After etching the metallic SWNTs by electrical breakdown, the MR can be further enhanced. Large positive MR values about 15%, 20% and 25% were found in three different devices at 0.24 tesla for semiconducting SWNTs at room temperature. Our results show potential for the development of magneto-electronic devices that are operable at room temperature.
机译:我们已经研究了磁场对单壁碳纳米管(SWNT)阵列的电阻(磁阻,MR)的影响。 SWNT器件由钯电极之间的金属和半导体SWNT的混合物组成。 在室温下研究了器件MR,在垂直磁场的存在下,高达0.24特斯拉。 由于外部磁场变高,因此电阻增加,表明SWNT的正MR。 通过电击蚀刻金属SWNT后,可以进一步提高MR。 在室温下为0.24特斯拉的三种不同的装置中发现了大约15%,20%和25%的大的阳性MR值,用于在室温下为半导体SWNT。 我们的结果表明,在室温下可操作的磁电子器件开发的潜力。

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  • 来源
    《RSC Advances 》 |2018年第19期| 共6页
  • 作者单位

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    CAS Ctr Excellence Nanosci Natl Ctr Nanosci &

    Technol CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学 ;
  • 关键词

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