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Experimental investigation and nuclear model calculations for proton induced reactions on indium around thresholds

机译:质子诱导阈值铟诱导反应的实验研究和核模型计算

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Proton reactions with natural indium were found to give biased reaction cross section due to self-induced accompanying neutron-induced reactions in the target. We gave state-of-art and provided original experimental measurement for combined proton-and proton-induced-neutron reactions on indium isotopes. Low-energy protons incident on targets of stacked metallic indium foils were used to investigate the cross section and reaction yield around threshold. Two equivalent targets were designed to compensate the effect of neutron fluctuation in the sample and to swap the energy range below 14 MeV. The presence of significant neutron had been probed through the variation of reaction rate for formation of In-116m fluence through-out the target foils; In-116m yield was dependent on the stack arrangement. The interplay between the proton reactions on target isotopes through the In-113(p,n) Sn113m+g In-113(p,p') In-113m, In-115(p,p'), In-115m, In-115(p,np)In-114m, and In-13(p,H-3) In-111m routes from one side and the reactions of proton-induced-neutrons from the other side alters the experimental results and strengthen the formation of Sn113m+g and In-114m on the expense of exhausting other reaction products. We stated the experimental values for the apparent reaction cross sections of these reactions in addition to the reaction cross section of short-lived isomeric level of Sn-113m (T-1/2 = 1284 s) through the decay gamma-line at 77.38 keV. Nuclear model calculations were performed for all the related reactions and used to adopt our hypothesized values concerning the combined proton-and proton-induced-neutron reaction cross sections. Two resonance states for the reaction In-113(p,H-3) In-111m were identified at 11.51 MeV (Gamma(t) = 0.961 MeV) and 14.12 MeV (Gamma(t) = 0.194 MeV).
机译:发现具有天然铟质子反应以由于靶的自感应伴随中子诱发反应,得到偏置的反应截面。我们给国家的技术和提供原始实验测量铟组合同位素质子和质子诱导的中子的反应。低能量质子入射在堆叠金属铟箔的目标被用来研究围绕阈值的横截面和反应产率。两个等价的目标设计样品中的补偿中子波动的效果和交换低于14兆电子伏的能量范围。显著中子的存在已通过反应速率为形成在-116米通量通过时的目标箔的变化进行探测;在-116米收率依赖于堆叠布置。上目标质子反应之间的相互作用同位素通过在In-113(P,N)Sn113m +克的In-113(P,P ')的In-113米,在-115(P,P'),在-115M,在-115(p,NP)在-114米和In-13(p,H-3)在-111米从一侧路线和质子诱导的中子的从另一侧改变的实验结果的反应和加强形成的Sn113m + g,并且在排出其它反应产物为代价的In-114米。我们指出,除了通过衰变伽玛线Sn-113米(T-1/2 = 1284或多个)的短暂的异构体水平的反应截面对于这些反应的表观反应截面的实验值在77.38千电子伏。核模型计算是对所有的相关反应进行,用于采用我们就结合质子和质子诱导中子反应截面假设值。用于该反应的In-113两个谐振状态(P,H-3)的In-111米鉴定在11.51兆电子伏(伽玛(T)= 0.961兆电子伏)和14.12兆电子伏(伽玛(T)= 0.194兆电子伏)。

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