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Normal-stress Semiconductor Sensor Using a Combined Square-shaped van der Pauw Structure

机译:常应应力半导体传感器使用组合的方形范德波坑结构

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A combined square-shaped van der Pauw (VDP) sensor is proposed for calculation of the difference of the in-plane normal-stresses in this work. In previous works, two separate measurements were required, which is so inconvenient and tricky, because the different pair of point-contacts were used for 0 and/or 90 degree oriented resistance measurement. This work analytically presented how to resolve these problems by using a combined VDP configuration and compared the in-plane normal-stresses differential sensitivities for the different silicon planes and the coordinate systems (un-primed or primed). Furthermore, we offered another approach using the voltage difference, in which the sensitivity was observed to be linearly proportional to the unstressed value of voltage V-ref (= I x R).
机译:组合的方形范德PAUW(VDP)传感器被提出用于计算这项工作中的面内正常应力的差异。 在以前的作品中,需要两个单独的测量值,这是不方便和棘手的,因为不同的一对点触点用于0和/或90度取向电阻测量。 这项工作通过使用组合的VDP配置分析了如何解决这些问题,并将平面内常规应力与不同硅平面和坐标系(未引用或灌注)进行比较。 此外,我们提供了一种使用电压差的另一种方法,其中观察到灵敏度与电压V-ref(= i x r)的无重音值线性成比例。

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