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Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography

机译:通过软纳米粉法光刻选择性等级图案化硅纳米结构

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摘要

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.
机译:使用常规光刻技术在微结构上进行层次模式,在微观结构上挑战,其中光致抗蚀剂(PR)膜在纵横比增加时不能均匀地覆盖微结构上。这种不均匀性导致纳米披透的定义差在微观结构上。纳米模板光刻可以通过直接沉积或等离子体蚀刻通过自由静止的纳米多孔膜来提供替代方法以在微观结构上分级构建纳米结构。在这项工作中,我们使用自由静态纳米粉纸剂证明了高纵横比纳米结构对硅微观结构的多尺度分层制造,其是由金属(Cr),Pr和抗反射涂层组成的纳米多孔膜。纳米模具膜用作沉积掩模,以在预定义的硅微结构上限定CR纳米蛋白图案。然后,使用CR纳米蛋白作为蚀刻掩模,使用深反应离子蚀刻在微结构上进行分级地产生纳米结构。通过简单地改变主要制造方法,仅在微结构的顶部或顶部和底部的微结构顶部选择性地定义高纵横比纳米粒子。

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