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Enrichment of semiconducting single-walled carbon nanotubes by simple equipment and solar radiation

机译:简单设备和太阳辐射富集半导体单壁碳纳米管

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High-purity semiconducting (s-) single-walled carbon nanotubes (SWCNTs) have great potential to replace silicon-based materials for microelectronic devices. However, the enrichment methods of s-SWCNTs usually required complex devices and non-renewable energy. In this study, instead of a traditional heating method, renewable solar was employed to dramatically increase the heating rate and improve the reaction to be simple and more controllable, thereby water was successfully used to selectively etch metallic (m-) SWCNTs. In this work, purified SWCNTs films were wetted by water and then exposed to focused solar radiation, causing the surface temperature of the SWCNT films to reach about 800 degrees C within 2s. In this case, the m-SWCNTs could be selectively etched by water rapidly. Finally, s-SWCNTs with a purity of about 95 wt% were obtained in several minutes without any complex devices or non-renewable energy.
机译:高纯度半导体(S-)单壁碳纳米管(SWCNT)具有替代微电子器件的硅基材料的巨大潜力。 然而,S-SWCNT的富集方法通常需要复杂的装置和不可再生能量。 在该研究中,代替传统的加热方法,可再生太阳能用于显着提高加热速率,改善反应简单且更可控的反应,从而将水成功地用于选择性地蚀刻金属(M-)SWCNTS。 在这项工作中,用水润湿纯化的SWCNT膜,然后暴露于聚焦的太阳辐射,使SWCNT薄膜的表面温度在2s内达到约800℃。 在这种情况下,可以通过水快速选择性地蚀刻M-SWCNT。 最后,在几分钟内获得纯度约为95wt%的S-SWCTS,没有任何复杂的装置或不可再生能量。

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