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Effects of Ga and Sn Additions on the Creep Strength and Oxidation Resistance of Near-alpha Ti Alloys

机译:Ga和Sn添加对近αTi合金蠕变强度和抗抗氧性的影响

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摘要

The effects of Ga and Sn additions, with an almost constant value regarding Al equivalence, on the creep properties and oxidation resistance of the near-alpha Ti alloy Ti-5Al-4Zr-1Mo were investigated. The creep strain rate increased due to the replacement of Sn with Ga, which was accompanied by an increase in the volume fraction of primary equiaxed alpha phase. In addition, the replacement of Sn with Ga decreased the activation energy of the steady-state creep rate for the similar volume fraction of the equiaxed alpha phase. Ga addition improved the oxidation resistance without Ga segregation at the TiO2/substrate interface, whereas Sn promoted oxide spallation with metallic Sn segregation at the interface. Ga uniformly dissolved into the internal TiO2 and into the external Al2O3 as a result of solid solution formation between Ga2O3 and the aforementioned oxides, which suppressed oxide growth. The formation of (GaAl)(2)TiO5 in TiO2 and Al2O3 was also discussed on the basis of the phase relationships in the TiO2-Al2O3-Ga2O3 system.
机译:研究了Ga和Sn的添加,具有几乎恒定的关于Al等量的蠕变性能和近αTi合金Ti-5Al-1Mo-1Mo的抗氧化性的效果。由于使用GA的替代Sn,蠕变应变率增加,该Sn伴随着初级等式α相的体积分数的增加。此外,用Ga的更换Sn降低了稳态蠕变率的激活能量,用于等式α相的相似体积分数。 GA添加改善了在TiO 2 /衬底界面处没有GA偏析的抗氧化性,而在界面处用金属Sn偏析促进氧化物脱落。由于Ga 2 O 3和上述氧化物之间的固溶体形成,Ga均匀地溶解在内部TiO 2中并进入外部Al 2 O 3,这抑制了氧化物生长。还基于TiO2-Al2O3-Ga2O3系统中的相位关系讨论TiO 2和Al2O3中的(Gaal)(2)TiO5的形成。

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