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首页> 外文期刊>Inorganica Chimica Acta >Fluorogenic sulphate anion sensor with INHIBIT logic gate by dinuclear Zn (II) complex: Synthesis, emission, DFT studies
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Fluorogenic sulphate anion sensor with INHIBIT logic gate by dinuclear Zn (II) complex: Synthesis, emission, DFT studies

机译:氟基硫酸盐阴离子传感器与抑制逻辑门(II)复合物:合成,排放,DFT研究

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摘要

N4O3 coordinating heptadentate non emissive ligand emits strong blue emissive light only in the presence of Zn (II) ion. This ligand yields a solid crystalline mu-phenoxo bridge dinuclear Zn(II) complex 1a. The binding stoi-chiometry, binding constant and binding affinity of the complex in solution state has been studied here. The UV-vis, Emission, H-1 NMR and ESI-MS several spectroscopic ratiometric titration of the ligand in presence of zinc ion revealed that the major part of the solution contained dinuclear form of the complex over the mono-nuclear form. Theoretical interpretation also justifies this dimeric behavior of the complexation in solution state. The complex was examined with varied types of anions, such as H2PO4 square, HPO42-, PO43-, SO42-, F-, Br-, Cl-, I-, AcO-, NO3-, ATP and ADP. The dinuclear species was found to act as a highly selective and sensitive receptor for tetrahedral SO42- by fluorescence ON-OFF signaling through the formation of sulphato bridging dinuclear complex 1b. The photo physical properties of both the complexes have been correlated by DFT and time-dependent DFT (TDDFT) method. The emission intensity changes of this dinuclear complex during the addition of sulphate anion is useful to construct an INHIBIT logic gate at the molecular level, by means of Zn2+ and SO42- ions as chemical inputs and the emission intensity as output signal.
机译:N4O3协调七孔径非发光配体仅在Zn(II)离子存在下发射强大的蓝色发光光。该配体产生固体结晶μ-苯氧基桥硫核Zn(II)络合物1A。这里研究了溶液状态的结合stoi-chiomometry,结合恒定和复合物的结合亲和力。紫外可见,排放,H-1 NMR和ESI-MS在锌离子的存在下,配体的几种光谱比例滴定揭示,溶液的主要部分包含在所述复合物的双核形式在单核形式。理论解释还证明了解决方案状态络合的这种二聚体行为。将复合物用不同类型的阴离子检查,例如H2PO4平方,HPO42-,PO43-,SO42-,F-,BR-,CL-,I-,ACO,NO3-,ATP和ADP。发现硫核物种用作四面体SO42的高度选择性和敏感的受体,通过荧光导通信号传导通过形成硫酸桥桥接的正核络合物1B。两者复合物的照片物理性质已经通过DFT和时间依赖性DFT(TDDFT)方法相关。在加入硫酸盐阴离期间,这种正核复合物的发射强度变化是可用于构建分子水平的抑制逻辑栅极,其作为化学输入和作为输出信号的发射强度。

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