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首页> 外文期刊>Journal of Physics. Condensed Matter >Magnetic control of valley and spin degrees of freedom via magnetotransport in n-type monolayer MoS2
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Magnetic control of valley and spin degrees of freedom via magnetotransport in n-type monolayer MoS2

机译:通过n型单层MoS2中的磁传输对谷和自旋自由度的磁控制

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摘要

We study the quantum magnetotransport properties at low temperature for n-type monolayer MoS2 under a perpendicular magnetic field within the linear response theory. By using Kubo formula, it is predicted that the valley-and spin-resolved Hall conductance obeys the same rule as that for conventional fermions. However, the first Hall plateau and the longitudinal charge conductance in low energies are fully valley/spin-polarized, which may produce a pure valley/spin current. In the low magnetic field limit, importantly, the resistance as a function of field is in good agreement with the available experiment data. These interesting findings can be tested experimentally and may be useful for valleytronic and spintronic applications.
机译:我们在线性响应理论内研究了垂直磁场下n型单层MoS2在低温下的量子磁传输性质。通过久保公式,可以预测谷和自旋分辨霍尔电导遵循与常规费米子相同的规则。但是,低能量时的第一个霍尔平台和纵向电荷电导是完全谷/自旋极化的,这可能会产生纯的谷/自旋电流。重要的是,在低磁场极限下,电阻随磁场的变化与可用的实验数据高度吻合。这些有趣的发现可以通过实验进行测试,可能对Valleytronic和Spintronic应用很有用。

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