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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The tuning of light-matter coupling and dichroism in graphene for enhanced absorption: Implications for graphene-based optical absorption devices
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The tuning of light-matter coupling and dichroism in graphene for enhanced absorption: Implications for graphene-based optical absorption devices

机译:调节石墨烯中的光-质耦合和二色性以增强吸收:对基于石墨烯的光吸收器件的启示

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摘要

The inter-band optical absorption in graphene characterized by its fine-structure constant has a universal value of 2.3% independent of the material parameters. However, for several graphene-based photonic applications, enhanced optical absorption is highly desired. In this work, we quantify the tunability of optical absorption in graphene via the Fermi level, angle of incidence of the incident polarized light, and the dielectric constants of the surrounding dielectric media in which graphene is embedded. The influence of impurities adsorbed on the surface of graphene on the Lorentzian broadening of the spectral function of the density of states is analytically evaluated within the equilibrium Green's function formalism. In all the cases, we find that absorption of light graphene embedded in dielectric medium is significantly higher than 2.3%. We also compute the differential absorption of right and left circularly-polarized light in graphene that is uniaxially and optically strained. The preferential absorption or circular dichroism is investigated for armchair and zigzag strain and the interplay of k-space and velocity anisotropy is examined. Finally, we relate circular dichroism to the Berry curvature of gapped graphene and explain the connection to parameters that define the underlying Hamiltonian.
机译:以其精细的结构常数为特征的石墨烯带间光吸收的2.3通用值与材料参数无关。然而,对于几种基于石墨烯的光子应用,非常需要增强的光吸收。在这项工作中,我们通过费米能级,入射偏振光的入射角以及嵌入石墨烯的周围介电介质的介电常数来量化石墨烯中光吸收的可调性。在平衡格林函数形式上,分析性地评估了吸附在石墨烯表面上的杂质对态密度谱函数的洛伦兹展宽的影响。在所有情况下,我们发现嵌入在介电介质中的石墨烯的吸收率明显高于2.3%。我们还计算了单轴和光学应变的石墨烯中左右圆偏振光的差分吸收。研究了扶手椅和之字形应变的优先吸收或圆二色性,并检验了k空间和速度各向异性的相互作用。最后,我们将圆二色性与带间隙的石墨烯的Berry曲率联系起来,并说明与定义基础哈密顿量的参数的关系。

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