Photoluminescence properties of erbium-doped europium thiosilicate

摘要

Photoluminescence properties of erbium-doped europium thiosilicate (Eu _2SiS_4: Er) are reported. The material is fabricated in powder and on silicon substrates. The luminescence at 1.54μm corresponding to the ~4I _(13/2)-~4I _(15/2) transition of Er~(3+) is observed. Broad absorption of the 4f~7-4f ~65d transition of Eu~(2+) in the host matrix in 350-500 nm region is used for the excitation of Er~(3+). Efficient energy transfer from the host to erbium is realized.