Properties of Silver Nanowire/Zinc Oxide Transparent Bilayer Thin Films for Optoelectronic Applications

摘要

We have investigated electrical, optical and structural properties of silver nanowire (AgNW)/zinc oxide (ZnO) transparent conductive bilayer films for optoelectronic applications. The AgNW/ZnO transparent conductive bilayer films were fabricated using spin-coating and facing target sputtering (FTS) method. The spin-coated the AgNW layer has advantages, such as low resistivity and high transmittance in visible range. However, the spin-coated AgNW layers can be oxidized by natural oxygen. Consequently, the conductivity of AgNW layer was strongly decreased. So, an oxidation prevented layer is necessary. The ZnO thin film layer on the Ag NW layer can be prevented oxidation. In addition, the peeling of spin-coated AgNW layer were prevented the deposited ZnO thin film layer. As the results, the sheet resistance and average transmittance in visible range of AgNW/ZnO transparent bilayer thin films exhibited 34.1 ohm/sq. and 83.46%.