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首页> 外文期刊>Journal of nanoscience and nanotechnology >Observation of Room Temperature Photoluminescence from Asymmetric CuGaO2/ZnOanMgO Multiple Quantum Well Structures
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Observation of Room Temperature Photoluminescence from Asymmetric CuGaO2/ZnOanMgO Multiple Quantum Well Structures

机译:不对称CuGaO2 / ZnOanMgO多量子阱结构的室温光致发光观察

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摘要

Asymmetric (CuGaO2/ZnO/ZnMgO) and symmetric (ZnMgO/ZnO/ZnMgO) multiple quantum well (MQW) structures were successfully fabricated using pulsed laser deposition (PLD) and their comparison were made. Efficient room temperature photoluminescent (PL) emission was observed from these MQWs and temperature dependent luminescence of asymmetric and symmetric MQWs can be explained using the existing theories. A systematic blue shift was observed in both MQWs with decrease in the confinement layer thickness which could be attributed to the quantum confinement effects. The PL emission from asymmetric and symmetric MQW structures were blue shifted compared to 150 nm thick ZnO thin film grown by PLD due to quantum confinement effects.
机译:利用脉冲激光沉积(PLD)成功地制造了不对称(CuGaO2 / ZnO / ZnMgO)和对称(ZnMgO / ZnO / ZnMgO)多量子阱(MQW)结构,并进行了比较。从这些MQW观察到高效的室温光致发光(PL)发射,并且可以使用现有理论解释不对称和对称MQW的温度相关发光。在两个MQW中均观察到系统性蓝移,其限制层厚度减小,这可能归因于量子限制效应。与通过PLD生长的150 nm厚的ZnO薄膜相比,由于量子限制效应,来自非对称和对称MQW结构的PL发射发生了蓝移。

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