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首页> 外文期刊>Journal of nanoscience and nanotechnology >On the Synthesis and Characterizations of TiO_2 Nanotubes
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On the Synthesis and Characterizations of TiO_2 Nanotubes

机译:TiO_2纳米管的合成与表征

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In the present work, aligned TiO_2 nanotubes have been synthesized by a simple method of electrochemical anodization of high purity, well cleaned, etched and ultrasonicated Ti-sheet (Purity ~99.99%) in a fluoride mediated electrolytic media consisting of a solution of 0.14 M NaF and a solution of 0.5 M/1.0 M H_3PO_4. Studies on the effects of anodization voltage, time and electrolyte concentration on the formation of TiO_2 nanotubes have been carried out. The TiO_2 nanotube arrays have been synthesized at applied anodization voltages of ~10 V and ~20 V. The anodization was carried out for 1 hour and 2 hours at each applied voltage. Structural/microstructural characterizations of TiO_2 nanotubes have been carried out through scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM images of TiO_2 nanotubes showed interesting features relating to morphology, the pore size (diameter of the tubes) and the lengths of the tube. TEM investigations revealed that the as synthesized nanotubes are amorphous in nature and on electron beam annealing, these transformed to crystalline phases (rutile and brookite). The optical characterizations through UV-Visible spectroscopy exhibited that the band gap are.~3.03 eV and ~2.87 eV for tubes synthesized at applied anodization voltages of ~10 V and ~20 V respectively. A tentative mechanism for the growth of TiO_2 nanotube has been put forward.
机译:在本工作中,通过简单的高纯度电化学阳极氧化方法合成了取向的TiO_2纳米管,该方法在由0.14 M溶液组成的氟化物介导的电解介质中经过良好清洁,蚀刻和超声处理的Ti-片(纯度〜99.99%)。 NaF和0.5 M / 1.0 M H_3PO_4的溶液。研究了阳极氧化电压,时间和电解质浓度对TiO_2纳米管形成的影响。 TiO_2纳米管阵列是在〜10 V和〜20 V的阳极氧化电压下合成的。在每个施加的电压下阳极氧化分别进行1小时和2小时。 TiO_2纳米管的结构/微观结构表征已通过扫描电子显微镜(SEM)和透射电子显微镜(TEM)进行。 TiO_2纳米管的SEM图像显示出有趣的特征,这些特征与形态,孔径(管的直径)和管的长度有关。 TEM研究表明,合成的纳米管本质上是无定形的,在电子束退火后,它们转变为结晶相(金红石和板钛矿)。通过UV-可见光谱的光学表征表明,在施加的阳极氧化电压分别为〜10 V和〜20 V的条件下,合成的管的带隙分别为〜3.03 eV和〜2.87 eV。提出了TiO_2纳米管生长的初步机理。

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