首页> 外文期刊>Journal of Materials Science >Polyalkylthiophene-containing electron donor and acceptor heteroaromatic bicycles: synthesis, photo-physical, and electroluminescent properties
【24h】

Polyalkylthiophene-containing electron donor and acceptor heteroaromatic bicycles: synthesis, photo-physical, and electroluminescent properties

机译:含聚烷基噻吩的电子供体和受体杂芳族自行车:合成,光物理和电致发光性质

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The synthesis and characterization of a series of polyalkylthiophenes-containing electron-rich thienothiophene (donor heteroaromatic bicycle) and electron-deficient benzothiadiazole (acceptor heteroaromatic bicycle) block have been reported. The polymers are synthesized by Stille cross-coupling reaction and are found to be having high molecular weight with number-average molecular weight in the range of 7.1 9 10~4-5.7 9 10~4. The photo-physical, electro-chemical, and electroluminescent (EL) properties of the polymers are investigated in detail.The optical band gap of the polymers is found to be in the range of 1.53-1.54 eV. These newpolymers are luminescent in nature and showed red photoluminescence in chloroform solution (722-740 nm) as well as in thin film (781-786 nm). Ionization potential for these polymers is calculated and falling in the range of 5.23-5.33 eV. Polymer light emitting diodes with configuration ITO/PDOT:PSS/polymer/BCP/Alq_3/LiF/Al have been fabricated, and a deep red emission is observed. The EL maxima of polymers are found to be in the range of 750-760 nm with threshold voltages around 4.0-5.5 V. The fabricated devices show luminescence around 40 cd/m2 at current density of 100 mA/cm~2 with maximum value of 580-810 cd/m~2 at 11 V.
机译:已经报道了一系列含聚烷基噻吩的富电子的噻吩并噻吩(给体杂芳族自行车)和缺电子的苯并噻二唑(受体杂芳族自行车)嵌段的合成和表征。该聚合物通过Stille交叉偶联反应合成,发现具有高分子量,数均分子量在7.1 9 10〜4-5.7 9 10〜4的范围内。详细研究了聚合物的光物理,电化学和电致发光(EL)性能,发现该聚合物的光学带隙在1.53-1.54 eV的范围内。这些新聚合物本质上是发光的,在氯仿溶液(722-740 nm)和薄膜(781-786 nm)中显示红色光致发光。计算出这些聚合物的电离电势,并落在5.23-5.33 eV的范围内。制备了具有ITO / PDOT:PSS /聚合物/ BCP / Alq_3 / LiF / Al构型的聚合物发光二极管,并且观察到深红色发射。发现聚合物的EL最大值在750-760 nm范围内,阈值电压约为4.0-5.5V。制成的器件在100 mA / cm〜2的电流密度下显示40 cd / m2的发光,最大值为在11 V下为580-810 cd / m〜2

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号