首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Oxygen vacancy relationship to photoiuminescence and heat treatment methods in hafnium oxide powders
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Oxygen vacancy relationship to photoiuminescence and heat treatment methods in hafnium oxide powders

机译:氧化ha粉中氧空位与光致发光和热处理方法的关系

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摘要

Hafnium oxide powders were synthesized using the sol-gel method and further subjected to microwave treatment (MT) or conventional heat treatment (CT). The HfO_2 powders were transformed into a mono-clinic phase with a small crystallite size when using MT at 350 °C and CT at 450 °C. Both methods gave products possessing photoiuminescence (PL) emission bands at approximately 415 and 523 nm. Furthermore, the intensity of the PL was found correlate to the treatment temperature and to the concentration of oxygen vacancies in the powders.
机译:使用溶胶-凝胶法合成氧化f粉末,并进一步进行微波处理(MT)或常规热处理(CT)。当在350°C下使用MT和在450°C下使用CT时,HfO_2粉末转变为微晶尺寸小的单斜晶相。两种方法都给出了在大约415和523 nm处具有光致发光(PL)发射带的产物。此外,发现PL的强度与处理温度和粉末中氧空位的浓度相关。

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