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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Characterization of Thin MgO Films on Ag(001) by Low-Energy Electron Diffraction and Scanning Tunneling Microscopy
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Characterization of Thin MgO Films on Ag(001) by Low-Energy Electron Diffraction and Scanning Tunneling Microscopy

机译:低能电子衍射和扫描隧道显微镜在Ag(001)上MgO薄膜的表征

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摘要

The evolution of the MgO(001) film morphology on Ag(001) was studied in dependence on the growth temperature (373-673 K) and grown MgO quantity (0.2-2 ML) by low-energy electron diffraction and scanning tunneling microscopy. We evidence an island growth mode of MgO for all temperatures. At 373 K, the MgO film exhibits a high island density, which is due to a too small surface mobility of the film compounds during the film growth. At a growth temperature of 673 K, silver hampers a perfect growth of MgO islands due to its high mobility, which leads to dendrites of MgO. The flattestand largest MgO islands are obtained at a growth temperature of around 573 K, which is a compromise guaranteeing a sufficiently high Mg or MgO mobility but also an enough low diffusion of silver.
机译:通过低能电子衍射和扫描隧道显微镜研究了生长温度(373-673 K)和生长的MgO量(0.2-2 ML),研究了Ag(001)上MgO(001)膜形貌的演变。我们证明了在所有温度下MgO的岛生长模式。在373 K下,MgO膜表现出高岛密度,这是由于膜化合物在膜生长过程中的表面迁移率太小所致。在673 K的生长温度下,银由于其高迁移率而阻碍了MgO岛的完美生长,从而导致MgO的树枝状生长。最平坦,最大的MgO岛是在573 K左右的生长温度下获得的,这是一个折中方案,既要保证足够高的Mg或MgO迁移率,又要使银的扩散足够低。

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