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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Vertical Conducting Nanodomains Self-Assembled from Poly(3-hexyl thiophene)-Based Diblock Copolymer Thin Films
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Vertical Conducting Nanodomains Self-Assembled from Poly(3-hexyl thiophene)-Based Diblock Copolymer Thin Films

机译:垂直导电纳米域自组装的聚(3-己基噻吩)基二嵌段共聚物薄膜

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摘要

We have synthesized π-conjugated poIy(3-hexyl thiophene)-block-poly(methyl methacrylate) (P3HT-b-PMMA) with a P3HT molecular weight of 11 kDa and a PMMA volume fraction of 0.53, which potentially has several organic electronic applications. Its phase-separation behavior was investigated for various thicknesses cast from organic solvents. When cast onto 300 nm thick SiO2 dielectrics from toluene, in which the P3HT segments have limited solubility, the P3HT-b-PMMA films consist of nanofibrillar self-assemblies of laterally π-stacked P3HT chains. In contrast, the P3HT segments were found to be highly mobile in chlorobenzene, generating a typical phase-separation morphology-consisting of vertically conducting P3HT nanodomains on these dielectrics. As the thickness of the cast films increased, however, the topmost surface becomes covered with π-conjugated nanofibrils that are laterally oriented with respect to the surface. Due to the anisotropic domain orientations of P3HT, top-gate organic field-effect transistors (OFETs) containing the P3HT-b-PMMA films exhibited enhanced electrical performance compared to bottom-gate OFETs.
机译:我们合成了P3HT分子量为11 kDa,PMMA体积分数为0.53的π-共轭聚(3-己基噻吩)-嵌段-聚(甲基丙烯酸甲酯)(P3HT-b-PMMA),它可能具有几种有机电子应用程序。研究了由有机溶剂铸成的各种厚度的其相分离行为。当从甲苯浇铸到300 nm厚的SiO2电介质上时,P3HT链段的溶解度有限,P3HT-b-PMMA薄膜由横向π堆积的P3HT链的纳米原纤维自组装体组成。相反,发现P3HT链段在氯苯中具有很高的移动性,在这些电介质上产生典型的相分离形态,由垂直导电的P3HT纳米域组成。但是,随着流延膜厚度的增加,最顶部表面被相对于该表面横向取向的π-共轭纳米原纤维覆盖。由于P3HT的各向异性域取向,与底栅OFET相比,包含P3HT-b-PMMA膜的顶栅有机场效应晶体管(OFET)表现出增强的电性能。

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