Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111)

摘要

The formation mechanism of monolayer Al(111) 1×1 film on the Si(111) √3× √3-Al substrate was studied by scanning tunneling microscopy and first-principles calculations. We found that the Si adatoms on the √3× √3-Al substrate play important roles in the growth process. The growth of Al1×1 islands is mediated by the formation and decomposition of SiAl_2 clusters. Based on experiments and theoretical simulations we propose a model where free Si atoms exhibit a catalystlike behavior by capturing and releasing Al atoms during the Al film growth.