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Temperature dependence of binary and ternary recombination of D _3~+ ions with electrons

机译:D _3〜+离子与电子的二元和三元复合的温度依赖性

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Flowing and stationary afterglow experiments were performed to study the recombination of D~3+ ions with electrons at temperatures from 77 to 300 K. A linear dependence of apparent (effective) binary recombination rate coefficients on the pressure of the helium buffer gas was observed. Binary (D_3~+ + e~-) and ternary (D_3~+ + e~- +He) recombination rate coefficients were derived. The obtained binary rate coefficient agrees with recent theoretical values for dissociative recombination of D_3~+. We describe the observed ternary process by a mechanism with two rate determining steps. In the first step, a rotationally excited long-lived neutral D_3 is formed in D_3~+ - e~- collisions. As the second step, the D_3 collides with a helium atom that prevents autoionization of D _3. We calculate lifetimes of D_3 formed from ortho-, para-, or metastates of D_3~+ and use the lifetimes to calculate ternary recombination rate coefficients.
机译:进行了流动和静态余辉实验,以研究D〜3 +离子与电子在77至300 K的温度下的复合。观察到明显(有效)的二元复合速率系数与氦缓冲气体压力之间的线性关系。推导了二元(D_3〜+ + e〜-)和三元(D_3〜+ + e〜-+ He)重组率系数。所获得的二进制速率系数与D_3〜+的解离重组的最新理论值一致。我们通过具有两个速率确定步骤的机制来描述观察到的三元过程。在第一步中,在D_3〜+-e〜-碰撞中形成了一个旋转激励的长寿命中性点D_3。第二步,D_3与防止D _3自动离子化的氦原子碰撞。我们计算由D_3〜+的邻位,对位或元态形成的D_3的寿命,并使用该寿命来计算三元复合率系数。

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