首页> 外文期刊>The Journal of Chemical Physics >Electron attachment to sulfur oxyhalides: SOF_2, SOCl _2, SO_2 F_2, SO_2 Cl_2, and SO_2 FCl attachment rate coefficients, 300-900 K
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Electron attachment to sulfur oxyhalides: SOF_2, SOCl _2, SO_2 F_2, SO_2 Cl_2, and SO_2 FCl attachment rate coefficients, 300-900 K

机译:电子与卤氧化硫的附着:SOF_2,SOCl _2,SO_2 F_2,SO_2 Cl_2和SO_2 FCl的附着速率系数为300-900 K

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摘要

Electron attachment to SOF_2, SOCl_2, SO_2 F_2, SO_2 FCl, and SO_2Cl_2 was studied with two flowing-afterglow Langmuir-probe apparatuses over the temperature range 300-900 K. Attachment rate coefficients at 300 K are ka =2.6±0.8× 10-10 (SOF_2), 1.8±0.5× 10-8 (SOCl_2), 4.8±0.7× 10-10 (SO_2 F_2), 2.4±0. 7× 10-9 (SO_2 Cl_2), and 2.0±0.6× 10-7 cm_3 s-1 (SO_2 FCl). Arrhenius plots of the data imply activation energies of 56±22 meV (SOF_2), 92±40 (SO _2 F_2), 44±22 meV (SOCl_2), and 29±15 meV (SO_2 Cl_2). The rate coefficients for SO_2 FCl decrease slightly with temperature, commensurate with the decrease in the capture rate coefficient. Electron attachment to SOF_2 and SO_2 F_2 is nondissociative, while reaction with SOCl_2, SO_2 FCl, and SO_2 Cl_2 is dissociative. Dissociative attachment is dominated by channels arising from S-Cl bond cleavage but also includes a minor channel forming a dihalide product ion. Branching fraction data are reported for the dissociative attachment channels.
机译:用两个流动余辉Langmuir探针装置研究了在300-900 K温度范围内电子对SOF_2,SOCl_2,SO_2 F_2,SO_2 FCl和SO_2Cl_2的电子附着。300K时的附着速率系数为ka = 2.6±0.8×10- 10(SOF_2),1.8±0.5×10-8(SOCl_2),4.8±0.7×10-10(SO_2 F_2),2.4±0。 7×10-9(SO_2 Cl_2)和2.0±0.6×10-7 cm_3 s-1(SO_2 FCl)。数据的阿累尼乌斯曲线表示活化能为56±22 meV(SOF_2),92±40(SO _2 F_2),44±22 meV(SOCl_2)和29±15 meV(SO_2 Cl_2)。 SO_2 FCl的速率系数随温度略有降低,与捕获速率系数的降低相对应。与SOF_2和SO_2 F_2的电子附着是非解离的,而与SOCl_2,SO_2 FCl和SO_2 Cl_2的反应是离解的。离解性连接主要由S-Cl键断裂产生的通道所控制,但也包括形成二卤化物产物离子的次要通道。报告了解离附着通道的支化分数数据。

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