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A Lagrangian, integral-density direct formulation and implementation of the analytic CCSD and CCSD(T) gradients

机译:CCSD和CCSD(T)梯度的Lagrangian积分密度直接公式化和实现

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摘要

Using a Lagrangian formulation an integral-density direct implementation of the analytic CCSD(T) molecular gradient is presented, which circumvents the bottleneck of storing either O(N~4) two-electron integrals or O(N~4) density matrix elements on disk. Canonical orbitals are used to simplify the implementation of the frozen-core approximation and the CCSD gradient is obtained as a special case. Also a new, simplified approach to (geometrical) derivative integrals is presented. As a first application we report a full geometry optimization for the most stable isomer of SiC_3 using the cc-pV5Z basis set with 368 contracted basis functions and the frozen-core approximation.
机译:使用拉格朗日公式,提出了解析的CCSD(T)分子梯度的积分密度直接实现,它克服了在O(N〜4)双电子积分或O(N〜4)密度矩阵元素上存储的瓶颈。磁盘。使用规范轨道来简化冻结核近似的实现,并在特殊情况下获得CCSD梯度。还提出了一种新的简化方法(几何)导数积分。作为第一个应用程序,我们报告了使用cc-pV5Z基集和368个收缩基函数和冷冻核近似对SiC_3的最稳定异构体进行了完整的几何优化。

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