首页> 外文期刊>Physical Review, B. Condensed Matter >Mesoscopic proximity effect in double-barrier superconductorormal-metal junctions - art. no. 100508
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Mesoscopic proximity effect in double-barrier superconductorormal-metal junctions - art. no. 100508

机译:双势垒超导体/正常金属结中的介观邻近效应-艺术。没有。 100508

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摘要

We report transport measurements down to T=60 mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. A zero-bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multireflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fit by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompanied by an excess of subgap conductance. [References: 30]
机译:我们报告了在扩散极限内,SININ和SNIN结构的传输测量低至T = 60 mK。我们制造了Al-AlOx / Cu / AlOx / Cu(SININ)和Al / Cu / AlOx / Cu(SNIN)垂直结。在金属SININ结构中观察到零偏异常。我们将此电导峰值归因于两个隧道势垒之间电子的相干多次反射。该电导最大值由介观SININ结构的相关理论定量地拟合。当去除SN接口处的势垒(SNIN结构)时,我们在有限电压下观察到电导的峰值,并伴随有过量的亚间隙电导。 [参考:30]

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