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首页> 外文期刊>Physical Review, B. Condensed Matter >Kondo and anti-Kondo resonances in transport through nanoscale devices - art. no. 165305
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Kondo and anti-Kondo resonances in transport through nanoscale devices - art. no. 165305

机译:通过纳米器件传输时的近藤和反近藤共振-艺术。没有。 165305

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We study the current through a quantum wire side-coupled to a quantum dot, and compare it with the case of an embedded dot. The system is modeled after the Anderson Hamiltonian for a linear chain, with one atom either coupled to (side dot) or substituted by (embedded dot) a magnetic impurity. For realistic (small) hopping of the dot to the rest of the system, an exact relationship between both conductivities holds. We calculate the temperature dependence for moderate values of the Coulomb repulsion U using an interpolative perturbative scheme. For sufficiently large U and temperature greater than the Kondo temperature, the conductance as a function of gate voltage displays two extrema. [References: 22]
机译:我们研究通过量子线侧耦合到量子点的电流,并将其与嵌入式点的情况进行比较。该系统以安德森·哈密顿方程为线性链建模,其中一个原子与(杂质点)耦合或由(杂质点)取代磁性杂质。为了使点实际跳到系统的其余部分,两个电导率之间应保持精确的关系。我们使用插值扰动方案计算库仑斥力U的中等值的温度依赖性。对于足够大的U和高于近藤温度的温度,电导随栅极电压的变化表现出两个极值。 [参考:22]

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