Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1 X 1) surfaces - art. no. 075405

摘要

Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of metallization was found at a Ag coverage of similar to0.6 monolayers. Two surface states were observed at (&UGamma;) over bar point in the metallic films, with binding energies of 0.10 and 0.35 eV, By measurements of photoelectron angular distribution at the Fermi level in these films, a cross-sectional cut of the Fermi surface was obtained. The Fermi vector determined along different symmetry directions and the photoelectron lifetime of states at the Fermi level are quite close to those expected for Ag single crystal. In spite of this concordance, the Fermi surface reflects a sixfold symmetry rather than the threefold symmetry of Ag single crystal. This behavior was attributed to the fact that these Ag films are composed by two domains rotated 60degrees. [References: 10]