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首页> 外文期刊>Physical Review, B. Condensed Matter >Temperature-dependent quasiparticle band structure of the ferromagnetic semiconductor EuS - art. no. 085205
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Temperature-dependent quasiparticle band structure of the ferromagnetic semiconductor EuS - art. no. 085205

机译:铁磁半导体EuS的随温度变化的准粒子能带结构-技术没有。 085205

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摘要

We present calculations for the temperature-dependent electronic structure of the ferromagnetic semiconductor EuS. A combination of a many-body evaluation of a multiband Kondo-lattice model and a first-principles T=0-band-structure calculation [tight-binding linear muffin-tin orbital (TB-LMTO)] is used to get realistic information about temperature- and correlation effects in the EuS energy spectrum. The combined method strictly avoids double-counting of any relevant interaction. Results for EuS are presented in terms of spectral densities, quasiparticle band structures, and quasiparticle densities of states, and that over the entire temperature range. [References: 36]
机译:我们目前对铁磁半导体EuS的温度相关电子结构进行计算。多波段近藤格子模型的多体评估与第一原理T = 0波段结构计算[紧束缚线性松饼-锡轨道(TB-LMTO)]的组合用于获得有关EuS能谱中的温度效应和相关效应。组合方法严格避免了任何相关交互的重复计算。 EuS的结果以光谱密度,准粒子能带结构和状态的准粒子密度以及整个温度范围内的密度表示。 [参考:36]

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