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首页> 外文期刊>Physical Review, B. Condensed Matter >Transport properties of high-angle grain boundaries in Co-doped YBa2Cu3O7-delta thin films - art. no. 174504
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Transport properties of high-angle grain boundaries in Co-doped YBa2Cu3O7-delta thin films - art. no. 174504

机译:共掺杂YBa2Cu3O7-delta薄膜中高角度晶界的传输特性-艺术没有。 174504

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摘要

We have measured the electrical properties of symmetric 24degrees-angle grain boundaries in YBa2(Cu1-xCox)(3)O7-delta thin films, for x=0-0.1. The Josephson properties of the grain boundaries vary dramatically with the amount of Co doping and with the growth conditions. The critical current decreases and the resistance increases as Co is added until the supercurrent is suppressed. The IcRn product scales in a similar manner as other high-T-c weak links. The I-V characteristics become nonlinear with Co doping and often display resonant structure. An analysis of these results indicates that these grain boundaries are not well described by simple models. [References: 36]
机译:我们已经测量了YBa2(Cu1-xCox)(3)O7-delta薄膜中对称的24度角晶界的电学特性,其中x = 0-0.1。晶界的约瑟夫森性质随Co掺杂量和生长条件而变化很大。临界电流减小,并且电阻随着添加Co的增加而增大,直到超电流被抑制为止。 IcRn产品的扩展方式与其他高T-c薄弱环节相似。 I-V特性随Co掺杂而变为非线性,并经常显示谐振结构。对这些结果的分析表明,用简单的模型不能很好地描述这些晶界。 [参考:36]

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