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首页> 外文期刊>Physical Review, B. Condensed Matter >Growth and magnetism of Co nanometer-scale dots squarely arranged on a Cu(001)-c(2X2)N surface - art. no. 214420
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Growth and magnetism of Co nanometer-scale dots squarely arranged on a Cu(001)-c(2X2)N surface - art. no. 214420

机译:正方排列在Cu(001)-c(2X2)N表面上的Co纳米级点的生长和磁性-艺术。没有。 214420

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We have studied the growth and magnetism of two-dimensionally coupled nanometer-scale Co dots which are squarely arranged on a Cu(001)-c(2 x 2)N surface. The morphology was analyzed by scanning tunneling microscopy, and the magnetization was studied using the magneto-optical Kerr effect. Well-ordered arrays of two monolayer (ML) thick Co dots interconnected by narrow 1 ML thick Co films can be grown by adjusting the deposited amount of Co. Here we used selective growth of Co at the clean Cu area of the surface, which consists of 5 x 5 nm(2) N-adsorbed c(2 x 2) patches separated by clean Cu lines of a few nm in width. The observed ferromagnetism in these arrays is considered to be mediated by narrow monolayer thick Co films on clean Cu lines. When the average thickness of Co exceeds 1.5 ML, 2 ML thick Co dots are connected with each other, and 1 ML Co films grow on the c(2 x 2)N patches. For Co films with an average thickness between 1.8 ML and 2.1 ML, the magnetization is almost constant between 150 K and 370 K, and increases with decreasing temperature from 150 K. This result suggests that polarization is induced in the 1 ML Co film on c(2 x 2)N patches below 150 K. [References: 23]
机译:我们研究了二维耦合的纳米级Co点的生长和磁性,这些点正方排列在Cu(001)-c(2 x 2)N表面上。通过扫描隧道显微镜分析形态,并利用磁光克尔效应研究磁化强度。可以通过调整Co的沉积量来生长由1 ML厚Co膜互连的两个单层(ML)厚Co点的有序阵列。这里,我们在表面的干净Cu区域使用了Co的选择性生长, 5 x 5 nm(2)N吸附的c(2 x 2)贴片由宽度为几nm的干净Cu线隔开。在这些阵列中观察到的铁磁性被认为是由干净的Cu线上狭窄的单层厚Co膜介导的。当Co的平均厚度超过1.5 ML时,2 ML厚的Co点相互连接,并且1 ML Co膜在c(2 x 2)N贴片上生长。对于平均厚度在1.8 ML和2.1 ML之间的Co膜,磁化强度在150 K和370 K之间几乎恒定,并且随着温度从150 K降低而增加。这表明在c上的1 ML Co膜中会感应极化。低于150 K的(2 x 2)N个补丁。[参考:23]

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